? 2009 ixys corporation, all rights reserved symbol test conditions maximum ratings v dsx t j = 25 c to 150 c 1000 v v gsx continuous 20 v v gsm transient 30 v p d t c = 25 c60w t j - 55 ... +150 c t jm 150 c t stg - 55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10s 260 c m d mounting torque (to-220) 1.13 / 10 nm/lb.in. weight to-252 0.35 g to-263 2.50 g to-220 3.00 g ds100182a(12/09) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dsx v gs = - 5v, i d = 25 a 1000 v v gs(off) v ds = 25v, i d = 25 a - 2.0 - 4.0 v i gsx v gs = 20v, v ds = 0v 50 na i dsx(off) v ds = v dsx , v gs = - 5v 1 a t j = 125 c 15 a r ds(on) v gs = 0v, i d = 400ma, note 1 21 i d(on) v gs = 0v, v ds = 50v, note 1 800 ma depletion mode mosfet n-channel ixty08n100d2 IXTA08N100D2 ixtp08n100d2 v dsx = 1000v i d(on) > 800ma r ds(on) 21 features ? normally on mode ? international standard packages ? molding epoxies meet ul 94 v-0 flammability classification advantages ? easy to mount ? space savings ? high power density applications ? audio amplifiers ? start-up circuits ? protection circuits ? ramp generators ? current regulators ? active loads g = gate d = drain s = source tab = drain to-252 (ixty) to-263 aa (ixta) g d s to-220ab (ixtp) d (tab) g s d (tab) g s d (tab) preliminary technical information
ixty08n100d2 IXTA08N100D2 ixtp08n100d2 ixys reserves the right to change limits, test conditions, and dimensions. symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 30v, i d = 400ma, note 1 330 560 ms c iss 325 pf c oss v gs = -10v, v ds = 25v, f = 1mhz 24 pf c rss 6.5 pf t d(on) 28 ns t r 57 ns t d(off) 34 ns t f 48 ns q g(on) 14.6 nc q gs v gs = 5v, v ds = 500v, i d = 400ma 1.2 nc q gd 8.3 nc r thjc 2.08 c/w r thcs to-220 0.50 c/w safe-operating-area specification characteristic values symbol test conditions min. typ. max. soa v ds = 800v, i d = 45ma, t c = 75 c, tp = 5s 36 w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v sd i f = 800ma, v gs = -10v, note 1 0.8 1.3 v t rr 1.03 s i rm 7.40 a q rm 3.80 c ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1. pulse test, t 300 s, duty cycle, d 2%. resistive switching times v gs = 5v, v ds = 500v, i d = 400ma r g = 10 (external) i f = 800ma, -di/dt = 100a/ s v r = 100v, v gs = -10v to-263 (ixta) outline 1. gate 2. drain 3. source 4. drain bottom side dim. millimeter inches min. max. min. max. a 4.06 4.83 .160 .190 b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055 c 0.40 0.74 .016 .029 c2 1.14 1.40 .045 .055 d 8.64 9.65 .340 .380 d1 8.00 8.89 .280 .320 e 9.65 10.41 .380 .405 e1 6.22 8.13 .270 .320 e 2.54 bsc .100 bsc l 14.61 15.88 .575 .625 l1 2.29 2.79 .090 .110 l2 1.02 1.40 .040 .055 l3 1.27 1.78 .050 .070 l4 0 0.13 0 .005 pins: 1 - gate 2 - drain 3 - source 4 - drain to-220 (ixtp) outline to-252 aa (ixty) outline dim. millimeter inches min. max. min. max. a 2.19 2.38 0.086 0.094 a1 0.89 1.14 0.035 0.045 a2 0 0.13 0 0.005 b 0.64 0.89 0.025 0.035 b1 0.76 1.14 0.030 0.045 b2 5.21 5.46 0.205 0.215 c 0.46 0.58 0.018 0.023 c1 0.46 0.58 0.018 0.023 d 5.97 6.22 0.235 0.245 d1 4.32 5.21 0.170 0.205 e 6.35 6.73 0.250 0.265 e1 4.32 5.21 0.170 0.205 e 2.28 bsc 0.090 bsc e1 4.57 bsc 0.180 bsc h 9.40 10.42 0.370 0.410 l 0.51 1.02 0.020 0.040 l1 0.64 1.02 0.025 0.040 l2 0.89 1.27 0.035 0.050 l3 2.54 2.92 0.100 0.115 1. gate 2. drain 3. source preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice.
? 2009 ixys corporation, all rights reserved ixty08n100d2 IXTA08N100D2 ixtp08n100d2 fig. 1. output characteristics @ t j = 25oc 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 02468101214 v ds - volts i d - amperes v gs = 5v 2v 1v -2v 0v -1v fig. 2. extended output characteristics @ t j = 25oc 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 0 1020304050607080 v ds - volts i d - amperes v gs = 5v 2v 1v -2v -1v 0v fig. 3. output characteristics @ t j = 125oc 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 5 10 15 20 25 30 v ds - volts i d - amperes v gs = 5v 1v -1v -2v 0v -3v fig. 4. drain current @ t j = 25oc 1e-08 1e-07 1e-06 1e-05 1e-04 1e-03 1e-02 1e-01 0 100 200 300 400 500 600 700 800 900 1000 1100 1200 v ds - volts i d - amperes v gs = - 3.00v - 3.25v - 3.50v - 3.75v - 4.50v - 4.00v - 4.25v fig. 6. dynamic resistance vs. gate voltage 1.e+05 1.e+06 1.e+07 1.e+08 1.e+09 1.e+10 1.e+11 -4.6 -4.4 -4.2 -4.0 -3.8 -3.6 -3.4 -3.2 -3.0 -2.8 v gs - volts r o - ohms ? v ds = 700v - 100v t j = 25oc t j = 100oc fig. 5. drain current @ t j = 100oc 1.e-06 1.e-05 1.e-04 1.e-03 1.e-02 1.e-01 0 100 200 300 400 500 600 700 800 900 1000 1100 1200 v ds - volts i d - amperes v gs = -3.25v -3.50v -3.75v -4.00v -4.25v -4.50v
ixty08n100d2 IXTA08N100D2 ixtp08n100d2 ixys reserves the right to change limits, test conditions, and dimensions. fig. 7. normalized r ds(on) vs. junction temperature 0.2 0.6 1.0 1.4 1.8 2.2 2.6 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 0v i d = 0.4a fig. 8. r ds(on) normalized to i d = 0.4a value vs. drain current 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 i d - amperes r ds(on) - normalized v gs = 0v 5v - - - - t j = 125oc t j = 25oc fig. 9. input admittance 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0 0.5 v gs - volts i d - amperes t j = 125oc 25oc - 40oc v ds = 30v fig. 10. transconductance 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 i d - amperes g f s - siemens t j = - 40oc v ds = 30v 25oc 125oc fig. 12. forward voltage drop of intrinsic diode 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 0.4 0.5 0.6 0.7 0.8 0.9 v sd - volts i s - amperes t j = 125oc v gs = -10v t j = 25oc fig. 11. breakdown and threshold voltages vs. junction temperature 0.8 0.9 1.0 1.1 1.2 1.3 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade bv / v gs(off) - normalized v gs(off) @ v ds = 25v bv dsx @ v gs = - 5v
? 2009 ixys corporation, all rights reserved ixys ref: t_08n100d2(1c)8-25-09 ixty08n100d2 IXTA08N100D2 ixtp08n100d2 fig. 17. maximum transient thermal impedance 0.1 1.0 10.0 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 14. gate charge -5 -4 -3 -2 -1 0 1 2 3 4 5 0 2 4 6 8 10 12 14 16 q g - nanocoulombs v gs - volts v ds = 500v i d = 400ma i g = 1ma fig. 13. capacitance 1 10 100 1,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 15. forward-bias safe operating area @ t c = 25oc 0.01 0.10 1.00 10.00 10 100 1,000 v ds - volts i d - amperes t j = 150oc t c = 25oc single pulse 1ms 100s r ds(on) limit 10ms 100ms dc 25s fig. 16. forward-bias safe operating area @ t c = 75oc 0.01 0.10 1.00 10.00 10 100 1,000 v ds - volts i d - amperes t j = 150oc t c = 75oc single pulse 1ms 100s r ds(on) limit 10ms 100ms dc 25s
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